solid state devices, inc. SFT4300 features: data sheet #: xn0029d maximum ratings v cbo volts v ebo emitter - base voltage collector - emitter voltage v ceo volts volts ? radiation tolerant ? fast switching ? high frequency ? low saturation voltage ? 200 o c operating, gold eutectic die attach ? complementary use with sft 5333 to-5 2 amp 150 volts npn transistor total device dissipation derate above t c = 100 o c p d i c collector current amps designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. symbol unit package outline: to-5 pin 1: emitter pin 2: base pin 3: collector/case t j & t stg o c operating and storage temperature r q q jc o c/w thermal resistance 6.6 66 -65 to +200 15.2 8 2 collector - base voltage watts mw/ o c t c = 100 o c 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com value 80 150 i b base current current amps 1
solid state devices, inc. SFT4300 for thermal derating curves and other characteristic curves please contact ssdi marketing department. notes: * pulse test: pulse width = 300 m s, duty cycle = 2% 1/ t j =25 o c unless otherwise specified 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com volts 80 - bv ceo collector-emitter breakdown voltage (i c = 30 madc) m m a - 5 i ceo min max electrical characteristics 1 / symbol unit emitter cutoff current (v eb = 6 v dc ) - 200 dc current gain* hfe i ebo collector-emitter saturation voltage * 0.3 0.5 volts v ce ( sat) 1.2 base-emiter voltage (i c = 2 a dc , v ce = 2 vdc) - v be (on) v cc = 20v dc , i c = 1.0 a dc, v eb(off) = 3.7 vdc 50 50 - - 1 collector cutoff current (v ce = 40 v dc ) turn on time t (on) 130 nsec - i c = 1.0 a dc , v ce = 5 v dc i c = 2.0 a dc , v ce = 5 v dc i c = 1.0 a dc , i b = 100 ma dc i c = 2.0 a dc , i b = 200 ma dc current gain bandwidth product (i c = 1.0 a dc , v ce = 5 vdc, f = 10mhz) 100 - ft mhz output capacitance (v cb = 30 vdc, i e = 0 adc, f = 1.0mhz) - 45 cob pf i b1 = i b2 = 100 ma dc, r l - 20 ohms t (off) 1.5 m m sec - turn off time volts 150 bv cbo collector-base breakdown voltage (i c = 200 m adc) volts 8 - bv ebo emitter-base breakdown voltage (i e = 200 m adc) m m a m m a - - 1 75 i cbo collector cutoff current (v cb = 90 v dc , t c =25 o c) (v cb = 90 v dc, t c =100 o c) volts input capacitance (v be = 8 vdc, i c = 0 adc, f = 1.0mhz) cib - m m a - 225 pf
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